features x built-in bias resistors enable the configuration of an inverter circuit without connecting external input resistors (see equivalent circuit) x the bias resistors consist of thin-film resistors with complete isolation to allow negative biasing of the input. they also have the advantage of almost comp letely eliminating parasitic effects x only the on/off conditions need to be set for operation, making device design easy absolute maximum ratings parameter symbol value unit collector-base voltage v cbo 50 v collector-emitter voltage v ceo 50 v emitter-base voltage v ebo 5 v collector current-continuous i c 100 ma collector dissipation p c 150m w junction temperature t j 150 : storage temperature range t stg -55~150 : electrical characteristics sym parameter min typ max unit v (br)cbo collector-base breakdown voltage (i c =50ua, i e =0) 50 --- --- v v (br)ceo collector-emitter breakdown voltage (i c =1ma, i b =0) 50 --- --- v v (br)ebo emitter-base breakdown voltage (i e =50ua, i c =0) 5 --- --- v i cbo collector cut-off current (v cb =50v, i e =0) --- --- 0.5 ua i ebo emitter cut-off current (v eb =4v, i c =0) h fe dc current gain (v ce =5v, i c =1ma) 100 300 600 --- v ce(sat) collector-emitter saturation voltage (i c =5 ma, i b =0.5 ma) --- --- 0.3 v f t transition frequency (v ce =10v, i e =-5ma, f=100mhz) --- 250 --- mhz --- --- 0.5 ua r 1 input resistance 32.9 47 61.1 k sot-523 *marking: 06 epoxy meets ul 94 v-0 flammability rating moisure sensitivity level 1 2012- 0 willas electronic corp. npn digital transistor DTC144TE dimensions in inches and (millimeters) .043(1.10) .035(0.90) .069(1.75) .057(1.45) .004(0.10)min. .008(0.20) .004(0.10) .035(0.90) .028(0.70) .006(0.15) .014(0.35) .004(0.10)max. .067(1.70) .059(1.50) .035(0.90) .028(0.70) .014(0.35) .010(0.25)
2012- 0 willas electronic corp. npn digital transistor DTC144TE 0.1 1 10 100 10 100 1000 0.1 1 10 100 10 100 1000 0 1 02 03 04 0 0.1 1 10 0.1 1 10 100 0.1 1 10 100 02468 0 1 2 3 4 5 0 25 50 75 100 125 150 0 50 100 150 200 250 300 350 t a =100 t a =25 =10 i c v cesat ?? collector-emitter saturation voltage v cesat (mv) collector curremt i c (ma) 3000 i c h fe ?? t a =100 t a =25 dc current gain h fe collector current i c (ma) common emitter v ce = 5v f=1mhz i e =0 t a =25 v cb c ob ?? c ob reverse voltage v (v) capacitance c (pf) collector current i c (ma) base-emmiter voltage v be (v) i c ?? v be t a = 2 5 t a = 1 0 0 common emitter v ce =5v ambient temperature t a ( ) power dissipation p d (mw) p d ?? t a static characteristic common emitter t a =25 10ua 9ua 8ua 7ua 6ua 5ua 4ua 3ua 2ua i b =1ua collector current i c (ma) collector-emitter voltage v ce (v) DTC144TE typical characteristics
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